Synthesis and characterizations of graphene growth by RF-PECVD on thin films at low temperatures

Aishah Khalid, Mohd Ambri Mohamed, Burhanuddin Yeop Majlis, Mohd Asyadi Azam


High temperature is crucial for supplying enough energy to the graphene growth by using CVD method. Plasma existence in CVD system is the alternative to lower the growth temperature and promote the graphene growth mechanism. This plasma energy helps in changing the hydrocarbon gas to reactive radicals. The radicals and ions bombard the substrate surface which resulting in a more active surface structure by speeding up the chemical reaction. Here, we report graphene growth on polycrystalline Cobalt (Co) and Nickel (Ni) films, respectively using our simplified set-up of RF-PECVD and characterize their structural properties.


Graphene growth; plasma CVD; Low temperature; graphene on metal

Full Text:



Kumar, Ajay and Chee Huei. "Synthesis and BiomedicalApplications of Graphene: Present and Future Trends." (2013).

Biró, László P and Philippe Lambin. "Grain Boundaries inGraphene Grown by Chemical Vapor Deposition." New Journal ofPhysics 15, no. 3 (2013): 035024.

CWhaenng, ,H Sohnugmwinei, TLiiaann,g W Qeiaitoa,o C Zuhimenegi aZnhda oZ,h Xeniagobmo iHnga nZ. h"aAn gG, rJoiwantlhiMechanism for Graphene Deposited on Polycrystalline Co Film byPlasma Enhanced Chemical Vapor Deposition." New Journal ofChemistry 37, no. 5 (2013): 1616-1622.

Kim, Yong Seung, Jae Hong Lee, Young Duck Kim, Sahng-KyoonJerng, Kisu Joo, Eunho Kim, Jongwan Jung, Euijoon Yoon, YunDaniel Park, Sunae Seo and Seung-Hyun Chun. "Methane as anEffective Hydrogen Source for Single-Layer Graphene SynthesisoNna nCosuc aFloe i5l , bnyo . P3l a(2sm01a3 )E: n1h2a2n1c-1ed2 2C6.h emical Vapor Deposition."

Peng, Kaung-Jay, Chung-Lun Wu, Yung-Hsiang Lin, Yen-Ju Liu,Din-Ping Tsai, Yi-Hao Pai and Gong-Ru Lin. "Hydrogen-FreePecvd Growth of Few-Layer Graphene on an Ultra-Thin NickelFilm at the Threshold Dissolution Temperature." Journal of

PMaarkte,r iHalyse C Jhine,m Jiasntrnyi kC M1,e nyoe.r ,2 S4i (e2g0m1a3r) :R 3o8t6h2 a-3n8d7 V0.i era Skákalová."Growth and Properties of Few-Layer Graphene Prepared byChemical Vapor." 48, no. 4 (2010).

Dresselhaus, M. S., A. Jorio and R. Saito. "CharacterizingGraphene, Graphite, and Carbon Nanotubes by RamannSop.e 1ct r(o2s0c1o0p)y: .8"9 -A1n0n8u. al Review of Condensed Matter Physics 1,

Ferrari, A. C., J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri,F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth and A.K. Geim. "Raman Spectrum of Graphene and Graphene Layers."Physical Review Letters 97, no. 18 (2006).

LKeime, , WEuannh-Go,y Hu yLoeseu ba Andn , JHonyguwncahnu lJ uJnang.g , "WGroonw-Jthu CofhoF, eNwa-LesauynegrGVarappohr eDnee poons iat iTonh i1n7 C, noob.a l1t- F3 i(lm20 1o1n) a: 9S-i1/S4i


  • There are currently no refbacks.

Copyright (c) 2017 eProceedings Chemistry

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

Copyright © 2016 Department of Chemistry, Universiti Teknologi Malaysia.

Disclaimer : This website has been updated to the best of our knowledge to be accurate. However, Universiti Teknologi Malaysia shall not be liable for any loss or damage caused by the usage of any information obtained from this web site.
Best viewed: Mozilla Firefox 4.0 & Google Chrome at 1024 × 768 resolution.